Abstract
In this article a model is introduced that describes the charge transfer in pixels of an image sensor. The model is suitable for image sensors where lateral drift field photo detectors were implemented and considers the effects of thermal diffusion, drift due to the built-in potential gradient, and self-induced drift.The analytical result is compared with a numerical solution and confirmed by measurements. With this model it is possible to predict the amount of collected charge at the sense node for very short integration times in comparatively long pixel structures. This is particularly important for indirect time-of-flight applications with CMOS image sensors.This approach enables the optimization of the pixel layout as well as an advanced calibration that might possibly enhance the distance precision. The model can also be applied to image sensors featuring pinned photodiodes.
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