Abstract
The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE) ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE) copolymer ultrathin film.
Highlights
With the rapid development of intelligent electronics industry, ferroelectric materials have attracted a great deal of attention as a kind of functional material
We found that the cells with line electrodes display better polarization and fatigue resistance than those with flat electrodes
The depolarization field in an active layer is compensated more by a large number of free charges, which leads to a low δ2
Summary
With the rapid development of intelligent electronics industry, ferroelectric materials have attracted a great deal of attention as a kind of functional material. P(VDF-TrFE) is considered as one of the most promising candidates for applications of organic electronic devices, such as sensors [1,10,19,20,21], actuators [1,19,20,21,22], and non-volatile memories [9,23,24,25]. Besides the means mentioned above, optimizing the structure of capacitors is an important method to improve the performance of P(VDF-TrFE) films. Many significantly improved performances have been achieved, the physical mechanism and the model of such a structure effect of P(VDF-TrFE) films in a suitable capacitance are unclear. The polarization behavior of the optimized capacitor is one of the important issues for ferroelectric thin films in view of memory applications, which determines how fast such devices can operate. We found that the cells with line electrodes display better polarization and fatigue resistance than those with flat electrodes
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