Modeling of sputter-based atomic layer deposition with altered parameters

Abstract

Computational modeling of the sputtering process forming atomic layers of some technologically significant materials was performed based on sputter rate relation. Bismuth atomic layer deposition at different polar angles and ion fluence were shown. The atomic layers getting deposited were studied as a function of incident Argon ion energy at different pressure and a curve analogous to the Bragg curve was obtained. The sputtering parameters were varied to get different atomic layers of TiOx films and the variation of coverage with sticking coefficient was shown. The rate of change of partial sputtering yield with coverage was depicted in the sputter-based deposition of TiN films. The deposition pressure and time were varied to get films of different thicknesses. All the simulated results were correlated with experimental findings with features like variation of reactive gas pressure, electron aided momentum transfer in Bi, multilayer anatase and rutile formation in TiO2 and effect of process parameters on TiN.