Abstract
A kinetic model has been presented for atomic layer epitaxy of Si using cyclic exposures of SiH 2Cl 2 and atomic hydrogen. This model is based on the surface reaction of adsorbates formed by gas-phase reaction of SiH 2Cl 2. The ideal growth rate of one monolayer per cycle is achieved only when the dominant precursor is SiHCl. Limiting factors of the ALE window are also discussed.
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