Abstract
Equations are proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in cadmium vapor at different temperatures. The equilibrium constants for the formation of (Cl Te + V Cd 2− )− defect complexes and Te Cd 2+ antisite defects are calculated. An analytical expression is derived for the cadmium partial pressure corresponding to a type conversion. The conditions are established for producing n- and p-type CdTe〈 Cl〉 crystals with controlled carrier concentration.
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