Abstract
A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.
Highlights
The so called photostriction effect in semiconductors was found in germanium by Figielski in 1961 [2] and in silicon by Gauster and Habing six years later [3]
It was applied in photon detection [1, 7, 8] and chemical gas sensing [9]. They constructed a basic theory of the photostriction effect in a semiconductor cantilever structure. Their assumption was that the density of the Sensors 2007, 7 photoinduced excess carriers was homogeneous in the microcantilever, shown by the average density they used to calculate photoinduced strain in equations 2 and 3 in reference [1, 7, 8]
By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, we have constructed a model for prediction the photoinduced deformation in a microcantilever structure
Summary
The so called photostriction effect in semiconductors was found in germanium by Figielski in 1961 [2] and in silicon by Gauster and Habing six years later [3]. In the late 1990s, Datskos’s team investigated the photostriction effect in a silicon microcantilever structure [1, 7, 8] It was applied in photon detection [1, 7, 8] and chemical gas sensing [9]. They constructed a basic theory of the photostriction effect in a semiconductor cantilever structure Their assumption was that the density of the Sensors 2007, 7 photoinduced excess carriers was homogeneous in the microcantilever, shown by the average density they used to calculate photoinduced strain in equations 2 and 3 in reference [1, 7, 8]. The calculated results are compared with Datskos’s theoretical and experimental data
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