Abstract
This paper presents a sub-circuit model for partially depleted SOI drain extended MOSFETs (DEMOS) based on the HiSIM-HV model suitable for circuit simulator implementation. Our model accounts both for the high voltage and the floating body effects such as the quasi saturation effect, the impact ionization in the drift region and the famous kink effect. The model is validated for a set of channel and drift lengths to demonstrate the scalability of the model. The accuracy of the proposed sub-circuit model is verified using 2-D numerical simulations.
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