Abstract
This paper describes the characterization of hot-carrier degradation in 250 V-rating extended drain MOSFETs (EDMOSFETs) which have dierent device structures from those of low voltage (LV) devices. Two-dimensional numerical simulations show that the specic on-resistance degradation due to the trapped hot-carriers in 250 V-rating EDMOSFETs depends on the eld plate voltage and the localization of the trapped hot-carriers because the carrier density in the drift region is changed by the eld plate voltage and the locality of the drift region. The experimental results indicate that the hot-carriers are trapped in the overlapped drift region with the gate and the drift region around the n + drain. The hot-carriers trapped in the overlapped drift region with gate decrease only the specic on-resistance and can not degrade threshold voltage. The saturation current is slightly degraded by the trapped hot-carriers in the drift region around the n + drain.
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