Abstract
A novel approach to modeling MOSFET operation in the threshold region is proposed. A two-dimensional Poisson equation is solved analytically and the current continuity equation is solved iteratively in a self-consistent feedback scheme. The I-V characteristics and the profiles of channel field and mobile charge sheet are found over the entire region of device operation. The boundary between linear and saturation regions of device operation is inherently nonexistent in the model. The physical mechanism underlying the high values of maximum channel field E/sub L/ beyond channel pinch-off is highlighted. A simple analytical E/sub L/ model is derived. A comparison of this E/sub L/ model with previous models is made in the context of the experimental data.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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