Abstract
The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed. Keywords: Nanocrystal Memories.
Highlights
(Sung etal., 2002) [2]
(Brault et al, 2002)[3]
[Vdot-i]1×25 = -q [ C ]-1 25×25 [ ni ] 1×25 (Cgap)
Summary
(Sung etal., 2002) [2] (Brault et al, 2002)[3]
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