Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations

Abstract

Quantum dot gate (QDG) field-effect transistors (FETs) fabricated using Si and Ge quantum dot layers, self-assembled in the gate region over the tunnel oxide, have exhibited 3- and 4-state behavior applicable for ternary and quaternary logic, respectively. This paper presents simulation of QDG-FETs comprising mixed Ge and Si quantum dot layers over tunnel oxide using an analog behavior model (ABM) and Verilog model. The simulations reproduce the experimental I-V characteristics of a fabricated mixed dot QDG-FET. GeOx-cladded Ge quantum dot layer is in interface to the tunnel oxide and is deposited over with a SiOx-cladded Si quantum dot layer. The fabricated QDG-FET has one source and one gate. The ABM simulation models QDG-FET using conventional BSIM 3V3 FETs with capacitances and other device parameters. In addition, VERILOG model is presented. The agreement in circuit and quantum simulations and experimental data will further advance in the designing of QDG-FET-based analog-to-digital converters (ADCs), 2-bit logic gates and SRAM cells.