Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon

Abstract

Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.