Abstract
This paper details the study of the mechanism of large-grain polysilicon layer formations using metal-induced lateral crystallization (MILC). A model is proposed to predict the growth rate of MILC under the retardation effect of solid-phase crystallization (SPC) at different annealing conditions. The model has been extensively validated by experimental data. This paper will show that the SPC exists as a counter-effect to retard the MILC and degrade the superiority of the polysilicon layer. The model has been used to predict the MILC rate of large-grain polysilicon grown by a pulsed-annealing technique that suppresses the undesirable SPC effect. The model prediction agrees well with the experimental results.
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