Abstract
The effects of phosphorus doping and boron doping on the metal-induced lateral crystallization (MILC) rate have been studied. In the case of phosphorus doping, the MILC rate is very sensitive to the sequence of nickel deposition and doping. Phosphorous doping before the nickel deposition reduced the MILC rate much more than the vice versa. When the nickel removal was between the nickel deposition and phosphorus doping, the doping effect on the MILC rate turned out to be in the between of the two cases which are phosphorus doping before nickel deposition and nickel deposition before phosphorus doping. Boron doping results in the crystallization of a-Si at a lower temperature (550°C) compared with that of the solid phase crystallization (SPC). The sheet resistance of boron doped Si remained high because the boron dopants were segregated at the grain boundaries during crystallization of a-Si.
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