Modeling of Intrinsic Josephson Junctions in High Temperature Superconductors under External Radiation in the Breakpoint Region

Yu M Shukrinov,I R Rahmonov,O I Streltsova,M I Zuev,A Plecenik,G A Ososkov,Gh Adam,J Buša,M Hnatič

doi:10.1051/epjconf/201610802042

Abstract

The current-voltage (IV) characteristics of the intrinsic Josephson junctions in high temperature superconductors under external electromagnetic radiation are calculated numerically in the parametric resonance region. We discuss a numerical method for calculation of the Shapiro step width on the amplitude of radiation. In order to accelerate computations we used parallelization by task parameter via Simple Linux Utility for Resource Management (SLURM) arrays and tested it in the case of a single junction. An analysis of the junction transitions between rotating and oscillating states in the branching region of IV-characteristics is presented.

Highlights

The high temperature superconductors show layered structures consisting of alternating superconducting (S-layers) and insulating layers
The S-layers form a system of intrinsic Josephson junctions (IJJ, JJs) [1]
A specific feature of the coupled JJs is the appearance of an electric charge in the S-layers which is calculated based on the Maxwell equation div(εε0E) = Q, where ε and ε0 are the relative dielectric and electric constants, respectively

Summary

Introduction

The high temperature superconductors show layered structures consisting of alternating superconducting (S-layers) and insulating layers. The S-layers form a system of intrinsic Josephson junctions (IJJ, JJs) [1]. The electric field between two S-layers (and the voltage in the formed JJs) depends on the corresponding values in the neighboring junctions. This is the consequence of the coupling between junctions [2, 3] which results in a specific modification of the behavior of the intrinsic JJs as compared to a single junction. We analyze the effect of the external radiation on the IV-characteristics (IVC) of coupled Josephson junctions at small radiation amplitudes at a frequency corresponding to the parametric resonance in these systems. The amplitude dependence of the Shapiro steps width in the parametric resonance region unveiled by the numerical solutions is discussed

IV-characteristics and charge in S-layers

Amplitude dependence of the SS width in the case of a single JJ

Parallel computing

Conclusions