Abstract
In this paper, we present a review of recent results on Monte Carlo modeling of high‐frequency noise in III–V four‐terminal devices. In particular, a study of the noise behavior of InAlAs/InGaAs Double‐Gate High Electron Mobility Transistors (DG‐HEMTs), operating in common mode, and Velocity Modulation Transistors (VMT), operating in differential mode, has been performed taking as a reference a similar standard HEMT. In the DG‐HEMT, the intrinsic P, R and C parameters show a modest improvement, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance due to the lower resistances of the gate contact and the source and drain accesses. In the VMT, very high values of P are obtained since the transconductance is very small, while the differential‐mode operation leads to extremely low values of R.
Published Version
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