Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon

Abstract

Arsenic implantation profiles in (100), (110) and (111) silicon at 150 keV with doses between 10 12 and 2.5 × 10 14cm −2 are presented. The implantations have been performed in [100], [110] and [111] channeling directions and in the case of (100) silicon also in random direction with a tilt angle of 7° from [100]. These data are used for the modeling of electronic stopping and damage accumulation. The electronic stopping model contains a nonlocal, free flight path dependent and a local, impact parameter dependent part. The parameters of the model are determined by considering the [100] and the [110] channeling implantations. For the description of damage accumulation a model based on the modified Kinchin-Pease model is used. It is shown that consideration of the finite recoil range is of minor importance for the prediction of implantation profiles. The [110] channeling implantation profile is used to determine the parameters of the damage accumulation model. The implantations in [111] and 7° from [100] direction and further experiments from the literature are simulated with the previously determined parameters for electronic stopping and damage accumulation. Excellent agreement is found, showing that the dependence of arsenic implantation profiles on energy, beam orientation and dose is correctly predicted.