Abstract
A novel bi-material buffer gate 4H-SiC metal semiconductor field effect transistor (BMGFET) is proposed for the purpose of restraining the drain-induced barrier lowering (DIBL) effect. The analytical model of the DIBL effect for the BMGFET is built and its occurrence degree is evaluated by analyzing the dependence of the threshold voltage shift and the sub-threshold slope factor on the drain bias and the structure parameters. The results reveal that the DIBL effect is significantly suppressed because there appears a valley in the graph of the potential distribution function of the BMG structure.
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