Abstract
Silicon-on-insulator (SoI) technology has been reported as a technique to improve electrical characteristics over those of bulk MOSFETs. However, this approach results in the disadvantage of increased drain-induced barrier lowering (DIBL) due to drain electric flux (or field) passing through the buried oxide (BOX) layer. Against such a background, the development of a method to easily estimate the amount of this electric flux is expected to support the prediction of BOX-related DIBL. This paper involved the investigation of a model-derived analytically using conformal mapping techniques to represent the amount of flux in subthreshold regions of ground-plane SoI MOSFETs. To create the model, this paper was divided into two parts. In Part I, as preparation for model development, the relationships between coordinates in MOSFETs and potential/stream function were derived using conformal mapping, and related validity was verified. In Part II, the model’s development was considered based on these relationships, and its validity was also verified.
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