Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles

Abstract

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) space solar cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J solar cells from fitting the external quantum efficiencies for subcells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subcell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J solar cell can be predicted from the results of degradation level in the each subcell estimated from correlativity between NIEL and both radiation degradation parameters.