Abstract
A new alternative model of the formation and transformation of grown-in microdefects in dislocation-free silicon single crystals is proposed. The basic concepts of the alternative mathematical model of the formation of secondary grown-in microdefects are considered. It is shown that vacancy micropores are formed in a narrow temperature range of 1130–1070°C. This is caused by a sharp decrease in the concentration of background impurity which does not form agglomerates (they arise in the temperature range of 1420–1150°C upon crystal cooling).
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