Modeling of crosstalk induced overshoot/undershoot effects in Multilayer Graphene Nanoribbon Interconnects

Abstract

Crosstalk induced overshoot/undershoot effects in Multilayer Graphene Nano Ribbon interconnects (MLGNRs) are investigated using ABCD parameter matrix approach for intermediate level interconnects at 8 nm technology node. The worst case crosstalk induced peak overshoot voltage for perfectly specular doped multilayer zigzag GNR interconnects is comparable to that of copper interconnects. It is observed that the performance of neutral GNR interconnects is better than that of its doped counterpart in terms of peak crosstalk induced overshoot voltage. But from the perspective of effective electric field across the gate oxide, the multilayer doped GNR interconnects outperform neutral ones and copper interconnects for all the cases. Finally, our analysis has shown that from the gate oxide reliability perspective, the perfectly specular doped multilayer zigzag GNR interconnects are significantly advantageous to copper interconnects for future generation Integrated circuit technology.