Abstract
In this paper, we demonstrate a simple modeling of boron diffusion in Si 1− x− y Ge x C y by manipulating the strain and the intrinsic carrier concentration. We show that the diffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Si 1− x Ge x . This suppression is due to an under-saturation of Si self-interstitials in the C-rich region. The results obtained from the proposed model are in better agreement with the measured values.
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