Abstract
The lattice kinetic Monte Carlo simulation (kMCS) was applied to study the boron diffusion in Si-SiGe beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing temperatures, boron dopant concentrations, Ge compositions, and concentrations of Si self-interstitial defects (SiI). The effects on boron diffusion caused by single and double layer(s) of SiGe phase with different Ge contents and varying boron concentrations in double layers of SiGe phase were also simulated. The results show that boron diffusion in Si and between SiGe-Si both largely increase as the temperature or concentration of SiI increases, but the boron diffusion between SiGe-Si is much less than in Si. Increasing the Ge contents in SiGe alloy could retard boron diffusion heavily, while increasing the boron concentration on SiGe phase would enhance boron diffusion.
Highlights
In situ heavily boron-doped Si1-xGex epitaxy that is thermally stable in source/drain regions is very essential for a p-type metal-oxide-semiconductor field effect transistor
It is known to boron atoms diffuse via self-interstitials or vacancies during epitaxy growth [1], and could diffuse rapidly after thermal annealing arising from Si self-interstitial defects (SiI) introduction [2]-[4], namely transient enhanced diffusion (TED), through combination of boron and self-interstitial defects (SiI)
The results show the boron diffusion ratio and length both largely increase as the temperature or concentration of SiI increases
Summary
In situ heavily boron-doped Si1-xGex epitaxy that is thermally stable in source/drain regions is very essential for a p-type metal-oxide-semiconductor field effect transistor. The Boron diffusion between the source/drain and the n-well channel of p-type metal-oxide semiconductor (pMOS) which has drawn considerable attention is an important topic because owing to the electrical characteristics properties of n-type substrate could be degraded by boron diffusion., and the efficiency of pMOS is reduced. The frameworks of two phases lattice kinetic Monte Carlo simulation (kMCS) were applied to characterize boron diffusion mechanisms between SiGe and Si. The boron atoms are put in a region of width of 54 nm in a lattice of 108 nm × 54 nm area for nano device applications.
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