Modeling of Charge Transport

Abstract

Finally we turn to the simulation of charge transport in semiconductor devices. In few other areas has numerical simulation been as successful in aiding design and development. For this reason a great deal of research has been devoted to the modeling and simulation of these devices, and numerous reference texts are available. Because the field is so well covered in the literature, we will not attempt to present a detailed account of device modeling or the wide variety of numerical techniques available. We will instead focus on highlighting certain similarities between rarefied gases and systems of charged particles. For further information on Monte Carlo device simulation we refer the reader to the books of Jacoboni and Lugli [35] and Hess [33]. Information concerning the drift diffusion and hydrodynamic models, as well as other aspects of device simulation, can be found in the books of Markowich, Ringhofer and Schmeiser [60], Hansen [32], in the series edited by Selberherr, Stippel and Strasser [86], and in the review article by Lee, et al [56].KeywordsBoltzmann EquationCharge TransportKnudsen NumberMonte Carlo CalculationFree FlightThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.