Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

C Jungemann,B Meinerzhagen,B Neinhus,S Decker

doi:10.1109/iedm.2001.979550

Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

C Jungemann, B Meinerzhagen + Show 2 more

https://doi.org/10.1109/iedm.2001.979550

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Publication Date: Dec 2, 2001

Citations: 9

Affiliation: University of Bremen, Infineon Technologies (Germany)

#Drift-diffusion Model #Hydrodynamic Models + Show 8 more

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Abstract

2D RF noise models based on Langevin-type drift-diffusion (DD) and hydrodynamic (HD) models for Si and SiGe devices are presented, where all transport and noise parameters are generated by full-band Monte Carlo (MC) bulk simulations. The DD and HD model are validated by comparison with MC device simulations. It is shown that the usual approach based on the DD model in conjunction with the Einstein relation fails under nonequilibrium conditions. Considering the full-band structure a remarkably strong dependence of noise on crystal orientation is found.

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