Abstract
The primary objective of this modeling investigation is to optimize a multijunction cascade device under the AM1.5G spectrum. Based on previous studies, GaInP and GaAs cells between them tunnel junction GaAs, because of their energy band gaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of Ga0.5In0.5P (1.74 eV) while the bottom cell is made of GaAs (1.42 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices, the tandem cell GaInP /GaAs is designed with tunnel junction. In order to determine the optimal structure of the device, the top and bottom junctions were investigated and optimized with regard to the thicknesses. The optimum configuration of the device shows an efficiency of 36.4% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions
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