Abstract
ABSTRACTThe primary objective of this modeling investigation is to optimize a two-junction three-terminal device under the AM1.5G spectrum. Based on previous studies, AlGaAs and Si cells, because of their energy bandgaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of Al0.3Ga0.7As (1.817 eV) while the bottom cell is made of Si (1.124 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices, the tandem cell AlGaAs/Si is designed with three-terminals. In order to determine the optimal structure of the device, the top and bottom junctions were investigated and optimized with regard to the thicknesses and doping level. The optimum configuration of the device shows an efficiency of 26.27% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions. We also studied the effect of the optical concentration on the performance of the device and we found that the overall efficiency reaches over 31% under 50 suns.
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