Abstract
A compact bipolar transistor model [integral charge-control model (ICM)] has recently been developed that intrinsically includes many high-level effects (for example, conductivity modulation, base push-out effect, Early effect, and impact ionization). This paper presents a detailed characterization of a high-frequency silicon bipolar transistor using the ICM, with sufficient accuracy to allow calculation of intermodulation distortion. A set of electrical measurements for extracting ICM model parameters is described, and the method of extraction is discussed in detail. Finally, calculated values of second- and third-order distortion produced signals are compared with measured values and are found to be in good agreement, which demonstrates the accuracy of the ICM.
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