Abstract

A model is proposed to depict the formation of axial heterostructure in ternary III-V nanowires (NW) grown by the catalytic vapor-liquid-solid (VLS) method. Our approach is based on the determination of chemical potential of a four-component liquid using the regular solution model and Stringfellow's scheme for the computation of the interaction coefficients of species present in the droplet. The model allows the estimation of the heterojunction width dependence on the growth temperature. This dependence has not been reported before by any previous theoretical studies. The AlGaAs/GaAs heterojunction formation in the Au-catalyzed AlGaAs NWs was considered as an example of ternary system. The heterojunction width was found to increase with the growth temperature with a second-order polynomial dependence.

Highlights

  • Heterostructure nanowires (NWs) have a wide range of potential applications in opto- and nanoelectronics where the presence of an abrupt heterojunction is highly desirable for designing devices with high-performance characteristics [1, 2]

  • A model of heterostructure formation in ternary III-V NWs grown by catalytic VLS method is presented

  • The approach proposed is based on the determination of chemical potential of a fourcomponent liquid using the regular solution model and Stringfellow’s scheme for the computation of the interaction coefficients of species

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Summary

Introduction

Heterostructure nanowires (NWs) have a wide range of potential applications in opto- and nanoelectronics where the presence of an abrupt heterojunction is highly desirable for designing devices with high-performance characteristics [1, 2]. The formation of abrupt interfaces is much more difficult (e.g. for AlAs/GaAs, GaInAs/InAs, InGaAs/GaAs [4]) when elements from group III are interchanged formation. To the best of our knowledge, none of the existing model deals with heterostructures in ternary III-V NWs. only a small set of materials can be considered within the assumptions made. We propose a model describing heterostructure formation in ternary III-V NWs grown by catalytic VLS method. Our approach is based on the determination of chemical potentials of dissolved materials using the regular solution model and the Stringfellow formula for the computation of the interaction coefficients of species present in the droplet [5, 11]. The energy coefficients are calculated using the Stringfellow formula [16]

VY cXVX cYVY
Ga vGa vAl vGa
Results and discussion
Conclusion

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