Abstract
This article proposes a Ti-doped Vanadium dioxide (VO2) selector device for reducing the leakage current. Here, TiO2 is formed by the Ti atoms in the VO2 film for acting like a good insulator. Hence, it reduces the integration density when the leakage current in a Cross Bar Array (CBA) is increased. In this article, the modeled Pt/Ti-doped VO2/Pt selector device is integrated with the resistive random-access memory model to demonstrate its effectiveness on sneak path current reduction. The I ON / I OFF ratio of the suggested Ti-doped VO2 selector is higher than 2 × 1 0 4 . The simulated results outputs in terms of nonlinearity (∼ 28 × 1 0 4 ), current density (∼ 10 7 A cm − 2 ), and leakage current(∼0.31nA).
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