Modeling of 1300 nm hybrid III-V/silicon lasers

Abstract

In this study, the modeling of a III–V-Si hybrid semiconductor laser with an InGaAsP 80 nm thick active layer at a wavelength of 1300 nm was carried out using the LaserMOD commercial software program. The mesh, gain, optical output power, optical spectrum, transient response, and near-field and far-field of the laser designed as a result of the simulations were analyzed. It was observed that the light generated in the multi quantum well (MQW) layer can be successfully transferred to the Si waveguide, allowing for light transfer from one point to another in the photonic integrated circuit (PIC) structure. From the L-I curve of the hybrid laser, the threshold current and spectral width were found to be 5 mA and 13 nm, respectively. These results were compared with those of the InGaAsP/InP laser which had a threshold current of 30 mA and spectral width of 36 nm. This demonstrates that the hybrid laser outperforms the InGaAsP diode laser by having a significantly lower threshold current and better spectral coherence. The material gain peaks and the center wavelength of the optical spectrum were obtained around 1305 nm (0.96 eV), which is consistent with the design target of the laser. Additionally, in the transient response of the hybrid laser, it was observed that the oscillations that occur at the rising and falling edges of the light output were damped after approximately 500 ps. Finally, near-field and far-field results demonstrate that a single mode operation was achieved from the hybrid laser.