Abstract
The sputtering of hexagonal boron nitride due to low energy xenon ion bombardments occurs in various applications including fabrication of cubic boron nitride and erosion of Hall thruster channel walls. At low ion energies, accurate experimental characterization of sputtering increases in difficulty due to the low yields involved. A molecular dynamics model is employed to simulate the sputtering process and to calculate sputter yields for ion energies ranging from 10 to 350 eV. The results are compared to experimental data and a semiempirical expression developed by Bohdansky [Nucl. Instrum. Methods Phys. Res. B 2, 587 (1984)] is found to adequately describe the simulation data. Surface temperature effects are also investigated, and the sputter yield at 850 K is approximately twice that at 423 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.