Abstract
We have developed a multi-valley Monte Carlo simulator to study uniform transport in MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> monolayers. At low electric field, our solver is in excellent mutual agreement with a numerical solution of the linearized Boltzmann Transport Equation. We have then explored high field transport and analyzed the influence of different scattering mechanisms on the electron saturation velocity. Although scattering with neutral defects and Coulomb centers strongly affects the mobility, the effect on the saturation velocity is only modest. On the other hand, scattering with surface optical phonons has a significant influence on the saturation velocity, which we physically interpreted by inspecting the energy and momentum distributions of carriers.
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