Abstract
Monolayer MoS2 is a material with a rich history and that is being suggested for many applications in electronics, including novel electron devices. Recent experiments has shown that it has a saturation velocity at high electric fields well below other electronic materials such as Si. This is a very important property that is crucial to high performance electron devices. Here, we study this property with ensemble Monte Carlo simulations of the electron transport. We find that the velocity at high electric fields is larger than the experiments, and does not show a saturation up to 100 kV cm−1. In addition, the transport at high fields is dominated by inter-valley transfer to the T valleys.
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