Modeling heterogeneous melting in phase change memory devices

Abstract

We present thermodynamic crystallization and melting models and calculate phase change velocities in Ge2Sb2Te5 based on kinetic and thermodynamic parameters with a focus on the impacts of grain boundary melting. The calculated phase change velocities are strong functions of grain size, with smaller grains beginning to melt at lower temperatures. Phase change velocities are continuous functions of temperature which determine crystallization and melting rates. Hence, set and reset times as well as power and peak current requirements for switching are strong functions of grain size. Grain boundary amorphization can lead to a sufficient increase in cell resistance for small-grain phase change materials even if the whole active region does not completely amorphize. Isolated grains left in the amorphous regions, the quenched-in nuclei, facilitate templated crystal growth and significantly reduce set times for phase change memory cells. We demonstrate the significance of heterogeneous melting through 2-D electrothermal simulations coupled with a dynamic material phase change model. Our results show reset and set times on the order of ∼1 ns for 30 nm wide confined nanocrystalline (7.5 nm–25 nm radius crystals) phase change memory cells.