Abstract
A detailed chemical kinetics mechanism was developed to model silicon oxide clustering during high density plasma chemical vapor deposition of SiO2 films from silane-oxygen–argon mixtures. An inductively coupled plasma reactor was modeled in a one-dimensional multicomponent two-temperature framework. Spatial distributions of species concentrations were calculated. The effects of discharge parameters and the main processes contributing to cluster formation were examined. A sensitivity analysis was conducted to determine the dominant reactions that affect the model results.
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