Abstract
Device models for GaAs devices and GaAs/AlGaAs heterostructures are much less advanced than those for silicon devices. The author critically reviews recent advances in the modeling of GaAs/AlGaAs devices. The review is based on an examination of five selected device models that contain features common to the majority of device models for heterostructure bipolar and field effect transistors. Areas requiring improved measurement techniques on processed GaAs and improved physical concepts for GaAs/AlGaAs devise models are identified.
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