Modeling, Fabrication and Test Results of a MOS Controlled Thyristor — MCT - with high controllable current density

Abstract

A simple 2D static model for the evaluation of the maximum controllable current density in a MOS Controlled Thyristor (MCT) will be presented. It is shown that a 2D model of a P‐I‐N diode with a cathode PMOS transistor is appropriate for simulating the carrier distribution in an MCT. The maximum controllable current density can be modeled accurately using a static model of the free electron and acceptor concentrations. The simple physics rationale for this is discussed. MCT test results validate this simplified modeling approach. Punchthrough technology (PT) for high voltage application was used to manufacture an MCT with breakdown voltage of 2500 V and a maximum controllable current of 33 A with active area 0.33 cm2. The total number of N‐type cathode emitter cells is 144,042. For optimization, transient power dissipation electron irradiation with 2 MeV energy was used. This increased the maximum controllable current to 50 A. To our knowledge, our current density values of 100 A/cm2 for non irradiated and 150 A/cm2 for irradiated MCTs are the highest that have been reported for large area devices.