Abstract
The MOS controlled thyristor (MCT) is a power thyristor which is turned on and off by a highly interdigitated surface array of MOSFET gates. The high-voltage diffusiion-doped MCTs were developed by a three year contractual effort. These prototype MCTs have blocking voltages up to 3000 volts with a maximum controllable turn-off current density of 325 A/cm/sup 2/ in a 1 cm/sup 2/ active area die. A typical forward voltage drop is 2.5 V at 100 A with a 10/90% recovery time of 5 /spl mu/s. Characterization of these devices was undertaken and has shown: surge turn-on capability of 15.5 kA in a 16 /spl mu/s FWHM pulse; parallel operation of 3 devices at 300 A total current with less than 10% varation; and series operation of 3 devices at 5 kV, 150 A.
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