Modeling and Simulation of Si IGBTs

Abstract

Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.