Modeling and Simulation of High-κ Gate GaSb Nanowire Field Effect Transistor for Ultra High Speed and Low Power Applications

Abstract

In this work, we have presented a numerical model for calculating drain current, gate capacitance, gate leakage current and several other important metrics of GaSb nanowire field effect transistor (NWFET). A 2-D simulator is used to calculate gate capacitance, surface potential, charge profile and direct tunneling gate leakage current under different gate biases. Drain current is simulated using a 3-D simulator based on mode-space approach. Dependence of drain current on several device parameters like film thickness, gate length and source/drain Fermi level is also investigated. Gate delay, power-delay and energy-delay products are calculated to show these devices' applicability in ultra high speed and low power applications. To investigate the effects of using ternary alloys of GaSb and InSb, the same metrics are also calculated for GaxIn1-xSb NWFET.