Modeling and Simulation Analysis of TFET-Based Devices for Biosensor Applications

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The need to monitor and diagnose chemical and biomolecular analytes is gradually increasing our day-to-day health monitoring system. Monitoring and detecting these chemical analytes requires various features such as fast, ultrasensitive, reliable, portable sensor systems. Mostly, electrochemical biosensors reveal relative simplicity and portability. In addition, these devices are low cost, and it requires low power to operate. Hence, it becomes an excellent candidate for detecting a wide range of species, including proteins, nucleic acids, etc. In the recent trend of point of care application, this kind of biosensor is rapidly becoming an essential diagnostic tool. Researchers carefully incorporate the integrated systems and optimize the sensor's function by associated electronics, fluidics, and separation technology to analyze these biomolecules. This chapter discusses a brief review of tunnel field effect transistor (TFET)-based biosensor devices from the preliminary stage to presently used tunnel field effect transistors for biosensing applications. TFET-based biosensors have increased attention due to excellent and attractive properties such as high sensitivity, ability, and low cost to detect label-free biomolecules. Herein, the effect of gate function and backgate bias to develope a system of measurement of a dielectric modulated (DM) p-type tunnel field effect transistor (p-TFET)-based biosensor devices additionally reviewed. Sensitivity (S) and selectivity (ΔS) sensing metrics were significantly enhanced using gate work function and backgate voltages. It considered that by selecting gate function and backgate bias, band to band tunneling (BTBT) of carriers lowered, and a substantial change in electrical characteristics examined in a device with an empty cavity. The different types of TFET devices are discussed in this chapter to understand electronic incorporation. In addition, the structure and performance for the various devices were reviewed using modeling and simulation analysis.