Modeling and simulation analysis of SiGe heterojunction Double Gate Vertical t-shaped tunnel FET

Abstract

This paper deals with a new 2-D analytical surface potential model for heterojunction SiGe Double Gate Vertical t-shaped Tunnel Field Effect transistor and contemplate the inherit property of TFET that is dual modulation effect. This influence explains the control on the surface potential of the both biasing voltages at source and drain junctions that are used to measure the tunneling depletion widths. Therefore, the tunneling current uses the surface potential model as the basic for driving current model for the device. Parabolic approximation techniques are used to solve the equation of 2-D Poisson with the appropriate boundary conditions. We analyze the dependence of the surface potential profile on different parameters by varying the molefraction variation of SiGe material, gate source potential, drain source potential, gate oxide dielectric constant, gate oxide thickness, gate metal work function and different material used. Ultimately, we have the expression for the channel's surface potential along with tunneling current which have the accurate variation with the gate and drain biases. Efficiency of the proposed method has been confirmed by demonstrating the analytical results agreement with the TCAD simulation results.