Abstract
Polysilicon is mainly obtained by the Siemens process chemical vapor deposition (CVD) reaction, in which hydrogen gas and trichlorosilane (TCS) are fed into the CVD reactor to produce polysilicon. However, adjusting the feeding parameters in a step-by-step manner according to the actual deposition results is inefficient. In this paper, based on the existing mechanism model of the CVD reactor, we take use of historical data to construct a more accurate simulator. A random search algorithm is used to find good feeding parameters. The simulator can help increase polysilicon productivity while reduce the unit energy consumption.
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