Abstract
We present a numerical study, which investigates the potential of diode pumped Cr:LiCAF regenerative amplifiers in detail. Special attention has been given to relevant material properties of the gain media, like the Auger energy transfer upconversion (ETU) process, to utilize the full potential of the material and to develop guidelines in choosing optimal material properties like chromium doping concentration and length. Moreover, importance of pulsed pumping, rather than continuous-wave (cw) pumping, in obtaining higher small signal gain values is discussed in detail. Effects of pump power, cavity losses, excited-state absorption, seed pulse energy, optical damage and ETU on obtainable pulse energies will also be presented. The modeling results have shown that, Cr:LiCAF regenerative amplifiers pumped by two 675nm state-of-the-art 1-W tapered diodes have the potential to produce 50-fs long pulses around 800nm with 70μJ pulse energy and 1.4GW peak power at repetition rates up to 5kHz. Moreover, a 20-W diode pumped Cr:LiCAF amplifier has the potential to produce pulse energies of 1.1mJ and peak powers of 20GW. Expected optical-to-optical conversion efficiencies of the systems are about 30%. These results demonstrate that, with ongoing progress in laser diode technology, low-cost and efficient Cr:Colquiriite amplifiers has the potential to replace the expensive Ti:Sapphire technology in the future.
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