Abstract
In this study, the effects of annealing on the electrothermal properties of Gallium Oxide (Ga2O3) thin films were analyzed. Ga2O3 films were deposited by radio frequency sputtering on 4H-silicon carbide (4H-SiC) substrates. After deposition, one set of the devices was annealed at 900°C for 1 h under a N2 atmosphere. X-ray photoelectron spectroscopy (XPS) was performed to measure the change in the bandgap after annealing. Numerical simulations were performed using the parameters obtained from various measurements, such as XPS and Hall measurements, to investigate the electrothermal properties of Ga2O3. The thermal stability of the devices was derived from the current-voltage characteristics under different ambient temperatures. The relationship between the self-heating effect and annealing was investigated by studying the temperature distribution and power density. We confirmed that the annealed sample has the high current performance with a slight temperature rise.
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