Abstract
The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potentialVDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.
Highlights
Every day, products and processes for microsystems become more complex and lead to high degrees of accuracy and stability
Reliable design of these circuits, fabricated in advanced bipolar and BiCMOS technologies has become seriously affected by the deficiencies of SPICE Gummel-Poon model (SGPM) as discussed by Schroter et al [1] and need more physical-based and accurate models
Simulation results of MAT01 standard bipolar transistor with η = 3.54, VG0 = 1.185 V and vertical PNP transistors fabricated in 0.5 μm CMOS technology with η = 5.1, VG0 = 1.12046 V at two bias levels are shown in Figures 5 and 6
Summary
Products and processes for microsystems become more complex and lead to high degrees of accuracy and stability. Between the elements of electronic circuits used in microsystems, IC temperature sensors and temperature-compensated voltage references are frequently found. Reliable design of these circuits, fabricated in advanced bipolar and BiCMOS technologies has become seriously affected by the deficiencies of SPICE Gummel-Poon model (SGPM) as discussed by Schroter et al [1] and need more physical-based and accurate models. To achieve the required accuracy and stability in these circuits, an accurate description of the base-emitter voltage temperature dependence VBE(T) is needed. Η−m kT T q ln Tr , where VBE(Tr) and VG(Tr) are the base emitter and bandgap voltages at the reference temperature Tr. The accuracy of expression (2) depends on the accuracy of the bandgap voltage model VG(T) used. The emitter emission coefficient n(T) and its influence on VBE(T) has not been well studied up to now
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