Modeling and Experimental Analysis of Photovoltaic Parameters of GaInP/GaAs Dual Junction p–i–n Solar Cell

Abstract

In this study, the modeling and experimental analysis of photovoltaic parameters of the GaInP/GaAs dual–junction (DJ) p–i–n solar cell structure were examined. The design of the GaInP/GaAs DJ p–i–n solar cell structure was done with the drift–diffusion model (DDM), and this structure was grown with the molecular beam epitaxy (MBE) system. The fundamental parameters (open–circuit voltage ( $${V}_{\mathrm{OC}}$$ ), short–circuit current density ( $${J}_{\mathrm{SC}}$$ ), fill factor ( $$\mathrm{FF}$$ ), and energy conversion efficiency ( $$\eta$$ )) of these structures were determined by both modeling and the current–voltage experimental measurements. All electrical output parameters of the GaInP/GaAs DJ p–i–n solar cells obtained from modeling and experimental were compared. An increase in solar cell efficiency was observed with the integration of the i–layer.