Abstract

AbstractIn this paper, an accurate characterization method of the thermal impedance of silicon on insulator (SOI) technology silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) is proposed. The impact of electrical behavior and self-heating effects based on physical simulation and electrical characterization were analyzed in several different areas. Various aspects of the optimization of device performances are described. All the results of investigation are used for designing and optimizing Si/SiGe HBTs on SOI devices performance.KeywordsSelf-heating effectsSilicon-on-insulatorSiGe HBTs

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